凝聚态物理
反铁磁性
自旋电子学
材料科学
异质结
电子能带结构
铁磁性
肖特基势垒
量子隧道
半导体
光电子学
物理
二极管
作者
Minyong Han,Hisashi Inoue,Shiang Fang,Caolan John,Linda Ye,M. K. Chan,David Graf,T. Suzuki,Madhav Prasad Ghimire,Won Joon Cho,Efthimios Kaxiras,J. G. Checkelsky
标识
DOI:10.1038/s41467-021-25705-1
摘要
Abstract The kagome lattice has long been regarded as a theoretical framework that connects lattice geometry to unusual singularities in electronic structure. Transition metal kagome compounds have been recently identified as a promising material platform to investigate the long-sought electronic flat band. Here we report the signature of a two-dimensional flat band at the surface of antiferromagnetic kagome metal FeSn by means of planar tunneling spectroscopy. Employing a Schottky heterointerface of FeSn and an n-type semiconductor Nb-doped SrTiO 3 , we observe an anomalous enhancement in tunneling conductance within a finite energy range of FeSn. Our first-principles calculations show this is consistent with a spin-polarized flat band localized at the ferromagnetic kagome layer at the Schottky interface. The spectroscopic capability to characterize the electronic structure of a kagome compound at a thin film heterointerface will provide a unique opportunity to probe flat band induced phenomena in an energy-resolved fashion with simultaneous electrical tuning of its properties. Furthermore, the exotic surface state discussed herein is expected to manifest as peculiar spin-orbit torque signals in heterostructure-based spintronic devices.
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