光电子学
材料科学
二极管
发光二极管
晶体管
场效应晶体管
电流密度
薄脆饼
氮化镓
电气工程
电压
纳米技术
图层(电子)
物理
工程类
量子力学
作者
Xing Lü,Chao Liu,Huaxing Jiang,Xinbo Zou,Kei May Lau
出处
期刊:IEEE Electron Device Letters
[Institute of Electrical and Electronics Engineers]
日期:2017-06-01
卷期号:38 (6): 752-755
被引量:18
标识
DOI:10.1109/led.2017.2691908
摘要
This letter reports the monolithic integration of GaN-based driving vertical metal–oxide–semiconductor field-effect transistor (VMOSFET) on light-emitting diode (LED) with high output current density and bright-ness. By selectively regrowing a simple p- and n-GaN bilayer on top of an LED wafer, the VMOSFET was realized with an n/p/n structure and intrinsically connected with the LED through the bottom conductive n-GaN layer. During the fabrication, a tetramethylammonium hydride wet etch technique was employed to smoothen the sidewall channel surface of the VMOSFET and to enhance its channel electron mobility, consequently achieving a high output current density exceeding 1.4 kA/cm 2 . The integrated VMOSFET-LED exhibited a high light output power of 8.5 mW or 9.4 W/cm 2 with a modulated injection current of 10 mA through the VMOSFET, showing a great potential of such integration scheme for a variety of smart-lighting applications.
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