钙钛矿(结构)
发光二极管
材料科学
光电子学
二极管
单层
带隙
量子点
纳米技术
量子效率
结晶学
化学
作者
Junjie Si,Yang Liu,Zhuofei He,Hui Du,Kai Du,Dong Chen,Jing Li,Mengmeng Xu,He Tian,Haiping He,Dawei Di,Changqing Lin,Yingchun Cheng,Jianpu Wang,Yizheng Jin
出处
期刊:ACS Nano
[American Chemical Society]
日期:2017-10-24
卷期号:11 (11): 11100-11107
被引量:184
标识
DOI:10.1021/acsnano.7b05191
摘要
We report a facile solution-based approach to the in situ growth of perovskite films consisting of monolayers of CsPbBr3 nanoplates passivated by bulky phenylbutylammonium (PBA) cations, that is, two-dimensional layered PBA2(CsPbBr3)n-1PbBr4 perovskites. Optimizing film formation processes leads to layered perovskites with controlled n values in the range of 12-16. The layered perovskite emitters show quantum-confined band gap energies with a narrow distribution, suggesting the formation of thickness-controlled quantum-well (TCQW) structures. The TCQW CsPbBr3 films exhibit smooth surface features, narrow emission line widths, low trap densities, and high room-temperature photoluminance quantum yields, resulting in high-color-purity green light-emitting diodes (LEDs) with remarkably high external quantum efficiencies (EQEs) of up to 10.4%. The solution-based approach is extended to the preparation of TCQW CsPbI3 films for high-color-purity red perovskite LEDs with high EQEs of up to 7.3%.
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