生产线后端
平版印刷术
材料科学
临界尺寸
过程(计算)
纳米技术
缩放比例
光电子学
灵活性(工程)
质心
维数(图论)
计算机科学
原子层沉积
钥匙(锁)
可制造性设计
电子工程
电气工程
工程类
物理
图层(电子)
光学
人工智能
操作系统
纯数学
几何学
统计
数学
作者
Chi‐Chun Liu,Yann Mignot,Cheng Chi,Kafai Lai,Jing Sha,Jing Guo,Martin Glodde,Richard A. Farrell,Nelson Felix,David Hetzer,Andrew J. Metz,Daniel Corliss,Makoto Muramatsu,Yasuyuki Ido
摘要
The progress of using DSA for metal cut to achieve sub-20nm tip-to-tip (t2t) critical dimension (CD) is reported. Small and uniform t2t CD is very challenging due to lithographic limitation but holds the key to backend-of-the-line (BEOL) scaling. An integration scheme is demonstrated that allows the combination of design flexibility and fine, rectified local CD uniformity (LCDU). The combined effect of LCDU and centroid jittering will be discussed and compared to a hole shrink process using atomic layer deposition and spacer formation. The learning from this case study can provide perspectives that may not have been investigated thoroughly in the past. By including more important elements during DSA process development, such as metal cut, the DSA maturit y can be further advanced and move DSA closer to HVM adoption.
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