方向错误
材料科学
晶界
位错
纳米晶
凝聚态物理
晶界强化
粒度
透射电子显微镜
电导率
Crystal(编程语言)
结晶学
化学物理
纳米技术
复合材料
微观结构
物理化学
化学
物理
计算机科学
程序设计语言
作者
Chunyang Wang,Kui Du,Kepeng Song,Xing-Long Ye,Qi Lü,Suyun He,Dai‐Ming Tang,Ning Lü,Hai-Jun Jin,Feng Li,Hengqiang Ye
标识
DOI:10.1103/physrevlett.120.186102
摘要
Low-angle grain boundaries generally exist in the form of dislocation arrays, while high-angle grain boundaries (misorientation angle >15°) exist in the form of structural units in bulk metals. Here, through in situ atomic resolution aberration corrected electron microscopy observations, we report size-dependent grain-boundary structures improving both stabilities of electrical conductivity and mechanical properties in sub-10-nm-sized gold crystals. With the diameter of a nanocrystal decreasing below 10 nm, the high-angle grain boundary in the crystal exists as an array of dislocations. This size effect may be of importance to a new generation of interconnects applications.
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