Etch Rates and Selectivities of Citric Acid/Hydrogen Peroxide on GaAs , Al0.3Ga0.7As , In0.2Ga0.8As , In0.53Ga0.47As , In0.52Al0.48As , and InP

Etching studies involving citric acid/hydrogen peroxide (C 6 H 8 O 7 :H 2 O 2 ) at volume ratios from 0.5: 1 to 50: 1 were found to provide good selective etching of various III-V semiconductor materials grown on GaAs and InP substrates using molecular beam epitaxy. Both selective and uniform (nonselective) etching regions were found between these material systems by choosing different concentration volume ratios of citric acid/hydrogen peroxide (χC 6 H 8 O 7 :1H 2 O 2 )