Synthesis and thermoelectric properties of tantalum-doped ZrNiSn half-Heusler alloys

The Ta -doped ZrNiSn half-Heusler alloys, Zr 1-x Ta x NiSn , were synthesized by arc melting and hot-press sintering. Microstructure of Zr 1-x Ta x NiSn compounds were analyzed and the thermoelectric (TE) properties of Zr 1-x Ta x NiSn compounds were measured from room temperature to 823 K. The electrical conductivity increased with increasing Ta content. The Seebeck coefficient of Zr 1-x Ta x NiSn compounds was sharply decreased with increasing Ta content. The Hall mobility was proportional to T -1.5 above 673 K, indicating that the acoustic phonon scattering was predominant in the temperature range. The thermal conductivity was effectively depressed by introducing Ta substitution. The figure of merit of ZrNiSn compounds was improved due to the decreased thermal conductivity and increased electrical conductivity. The maximum ZT value of 0.60 was achieved for Zr 0.97 Ta 0.03 NiSn sample at 823 K.