Specific features of the liquid-phase epitaxial growth of SiC epilayers in vacuum

4 H -SiC epilayers were grown by a liquid-phase epitaxy in vacuum. It was found that the seed layer with steps characteristic of liquid-phase epitaxy should be preliminary deposited on the substrate. It is demonstrated that growth in a vacuum leads to a decrease in the concentration of uncompensated carriers N d – N a to the level of 2×10 16 cm −3 .