Frédéric Druon,Gareth J. Valentine,Frédérika Augé-Rochereau,François Balembois,Patrick Georges,Alain Brun,A. Aron,F. Mougel,G. Aka,D. Vivien
出处
期刊:Conference on Lasers and Electro-Optics日期:2000-01-01卷期号:99: 225-225
标识
DOI:10.1109/cleo.2000.906942
摘要
Summary form only given. The recently-developed Yb/sup 3+/ doped Ga/sub 4/LnO(BO/sub 3/)/sub 3/ (Ln=Y, Gd) crystals (Yb: LnCOB) have been shown to be promising for efficient all-solid-state lasers. These crystals exhibit many advantages such as simple quasi-three-level laser structure and absence of parasitic levels for the Yb/sup 3+/ ions. We present the results obtained from an Yb:GdCOB laser operating in the cw regime at room temperature pumped by 976-nm laser-diodes. Subsequently we will describe the results obtained in the Q-switch regime.