Characteristics of InN grown on SiC under the In-rich regime by molecular beam heteroepitaxy

InN epitaxial films were grown by N2 plasma-assisted molecular beam epitaxy on 4H- and 6H-SiC substrates using low-temperature InN nucleation layers. InN films grown at various In fluxes under the In-rich regime show improved crystal quality, surface morphology, and optical properties, without sizable metallic In incorporation. Photoluminescence measurements show emission up to room temperature, band gap values as low as 0.64eV at T=10K, and carrier concentrations of the order of 8×1017cm−3.