Temperature Dependence of the Thermal Properties of Optical Memory Materials

We have measured the temperature dependence of the thermal conductivities of Ge2Sb2Te5 (GST) and ZnS–SiO2 using a nano second thermoreflectance measurement system from room temperature to 500–600 °C. The specific heat capacities of these materials also have been determined from -130 to 500 °C for GST and from room temperature to 600 °C for ZnS–SiO2. The Debye temperature was obtained from specific heat capacity measurement. Using the obtained temperature dependence of the thermal conductivities, a temperature simulation inside a simple structured optical disk with and without considering its temperature dependence was carried out, and the difference in maximum temperature was approximate 80 °C.