材料科学
发光二极管
光通量
光电子学
氧化铟锡
退火(玻璃)
真空蒸发
薄脆饼
电阻率和电导率
薄膜
光学
纳米技术
复合材料
电气工程
光源
工程类
物理
作者
Yan Ding,Weiling Guo,Yanxu Zhu,Jianpeng Liu,Weiwei Yan
标识
DOI:10.1088/1674-4926/33/6/066004
摘要
8 mil × 10 mil InGaN/GaN blue LEDs with indium tin oxide (ITO) emitting at 460 nm were fabricated. A vacuum evaporation technique was adopted to deposit ITO on P-GaN with thickness of 240 nm. The electrical and optical properties of ITO films on P-GaN wafers, as well as rapid thermal annealing (RTA) effects at different temperatures (100 to 550 °C) were analyzed and compared. It was found that resistivity of 450 °C RTA was as low as 1.19 × 10 −4 Ω·cm, along with a high transparency of 94.17% at 460 nm. AES analysis indicated the variation of oxygen content after 450 °C annealing, and ITO contact resistance showed a minimized value of 3.9 × 10 −3 Ω·cm 2 . With 20 mA current injection, it was found that forward voltage and output power were 3.14 V and 12.57 mW. Furthermore, maximum luminous flux of 0.49 lm of ITO RTA at 550 °C was measured, which is the consequence of a higher transparency.
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