Diffusion of Boron, Phosphorus, Arsenic, and Antimony in Thermally Grown Silicon Dioxide

We studied the diffusion of dopant impurities, that is, ion-implanted boron, phosphorous, arsenic, and antimony in SiO 2 and determined the diffusivity of the impurities in SiO 2 using secondary ion mass spectrometry and a process simulator. We also revealed anomalous diffusion of the dopant impurities in SiO 2 .