Graphene-MoS2 heterostructure transistor

In order to simplify the preparation process of Graphene and molybdenum disulfide (MoS2) heterostructure transistors, a sessile drop method was proposed for sample preparation. In this paper, few-layers MoS2 and monolayer Graphene liquid were prepared by liquid-phase exfoliation. Then the liquid was successively used to form a film on the Si substrate, which covered with 300nm SiO2, by using spin-coater method. The Graphene/MoS2 transistor was prepared by electron beam evaporation with a metal mask plate. The K4200 semiconductor analyzer and probe platform were used to characterize the transistor. We also see that Graphene/MoS2 transistor is more sensitive to light from same wavelength. This fully demonstrates that the Graphene/MoS2 transistor combines the selective absorption of light of MoS2 and the characteristics of high carrier mobility of Graphene. And it greatly optimizes the performance of MoS2 transistor and Graphene transistor. Thus, Graphene/ MoS2 transistors, which produced by sessile drop method, will have more potential application in the electric and optoelectronic industry.