Modeling and Bulk Characterization of 4HSIC Radiation Detector in Sentaurus TCAD Simulation Environment

This paper gives an insight into the need for radiation detection and the most commonly flexible and efficient radiation detector. It also examines bulk characteristics of 4H-SiC semiconductor radiation detector with Ni and Ti as metals for the contact. Bulk characterization of the device, including: doping concentration, electrons and holes behaviors, space charge and current densities were carried out. The modeling is conducted using Sentaurus Technology Computer Aided Design (TCAD) to examine charge transport in bulk 4HSiC material. Data obtained were further analyzed through Sentaurus visual, sentaurus Techplot and Excel to clearly determine the characteristics of the device. It is observed that when the semiconductor and metal are in contact, the Fermi-level is established where the doping concentration varied with either magnitude of the doping concentration or nature of the dopant. Similarly, Schottky and ohmic contacts and temperature effect were observed from the device characteristics which demonstrate that, the detector can withstand a temperature from the range of 100K to 700K in no fluctuating state.