光电子学
材料科学
氮化镓
宽禁带半导体
电子工程
发光二极管
纳米技术
工程类
图层(电子)
作者
Yongzhou Zhao,Qi Wang,Zheng Qin,Feifan Ma,Haihui Xin,Kaiyi Wu,Xianjing Zhou,Guangchao Dai,Lei Xu,Xin Zheng,Tian Tang,Xiaofeng Chen,Lan Xun,Yongxing Liu,Liang Tian,Yi Huang,Hongsheng Zhang
标识
DOI:10.1109/led.2025.3584085
摘要
This study employs monolithic integration technology to fabricate Micro-LED display devices, which present a 0.12-inch, 640×480 blue active-matrix display with an ultra-high pixel density of 6773 pixels per inch (PPI), featuring a pixel size of 1.80 μm and a pixel pitch of 3.75 μm. The paper provides a detailed discussion of the fabrication process and the unique design approach used. Our Micro-LED display exhibits a luminance uniformity of 76.00% at 2 A/cm² and achieves a maximum brightness of 18,720 nits at 3 A/cm² under full-load conditions. These results demonstrate the tremendous potential of Micro-LED technology for high-resolution near-eye display applications.
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