Photovoltaic Parameters Affecting the Efficiency and Stability of Perovskite Photovoltaic Devices

Perovskite photovoltaic devices (PVDs) have emerged as excellent futuristic photovoltaic energy-harvesting material in the past few years with a remarkable efficiency of over 25%. The intense scientific research in the field of perovskite photovoltaic technologies further enables their goal of effective commercialization. The device’s efficiency strongly relies on the optical, morphological and electrical properties of the emerged charge collective and perovskite layer. This chapter critically articulates the advancements made by the choice of charge collecting layer to get the optimum PVDs. Further, the challenges of lead toxicity and the possible replacement with green non-toxic perovskite will also be discussed. The influence of photovoltaic parameters such as the thickness, bandgap, electron affinity, mobility, dielectric permittivity, density of states, donor and acceptor density and defect level on the device’s performance and stability are introduced in this chapter. The chapter also analyzes the impact of series resistance caused by various factors such as bulk resistance, circuit connection and contacts, uneven morphology, defects and voids/vacancies and trap states at grain boundaries of the perovskite layer. This chapter focuses on elucidating the theoretical mechanisms to optimize the photovoltaic performance of the device by tuning the photovoltaic properties and material modeling of different stoichiometry.