Mist‐Chemical Vapor Deposition Homoepitaxial β‐Ga2O3 Films Grown on Ni Mask

Homoepitaxial β‐Ga 2 O 3 films grown by mist‐chemical vapor deposition technique utilizing Ni mask as a buffer interlayer are studied. The films are successfully grown on (100) and (01) oriented gallium oxide substrates upon Ni deposition with subsequent formation of Ni sub‐micron‐island mask. The thicknesses of the (100) and (01) Ni/β‐Ga 2 O 3 films are estimated as 4 and 1.5 μm, respectively. The films grown on Ni/(01) β‐Ga 2 O 3 wafers have relatively high crystal perfection, while films grown on Ni/() β‐Ga 2 O 3 wafers are characterized by high growth rate. Although the proposed approach deteriorates the surface morphology and crystallinity of homoepitaxial films compared to the initial substrates, it can be applied to implement some exfoliation techniques, since the epitaxial layer has a large thickness and acceptable crystal perfection.