Peculiarities of magnetoresistance in GaAs whiskers at low temperatures

Magnetoresistance of GaAs whiskers with concentrations in the vicinity to metal-insulator transition (MIT) 1017–1018 cm−3 were studied at low temperatures and high magnetic fields (up to 14 T). The whiskers were doped with Te during the growth. The whisker diameter ranges from 10 to 40 μm. Temperature dependence of the whisker resistance have shown metallic and semiconductor character in the proximity to MIT from various sides of the transition. Depending on doping level the character of the whisker magnetoresistance changes from linear positive to quadratic negative. The magnetoresistance of metallic whiskers is explained in terms of weak antilocalization (WAL) model. The specimens with semiconductor character of conductance revealed negative magnetoresistance, magnitude of which rises due to moving away from MIT and reach 15% for the whiskers with concentration 1017 cm−3. The possible reasons of the negative magnetoresistance are discussed. The effect observed is attributed to weak localization (WL) of charge carriers in the region of hopping conductance for the whiskers in the vicinity to MIT. A high negative magnetoresistance (NMR) for the whiskers of low dopant concentration is connected with subsurface conductance in the disordered upper layers of the whiskers due to their core-shell structure.