Simulation of MHD-influence on silicon melt flow in Czochralski process

The applications of rotating magnetic field (RMF) in semiconductor crystals growth technology from a melt by Czochralski method (Cz) are discussed, including the known data of physical modeling of an electrically conductive KOH solution flows in a cylindrical crucible under RMF are considered and verified. Mathematical model of hydrodynamic processes is considered in relation to silicon single crystal growth in 100 mm diameter on Redmet-30 furnace equipped by RMF-magnet. The test results of calculated azimuth velocity profile with the measured data in KOH solution are presented. The results of parametric studies of melt flows stability in depending on the frequency and magnitude of RMF induction are summarized in the stability diagram.