Role of morphology and composition in the transport properties of highly conducting CVD grown PtTex

Abstract Platinum telluride (PtTe x ), a metallic noble transition-metal dichalcogenide, has emerged as a central candidate for magnetic and optoelectronic applications. Recently, PtTe x has drawn great attention because of its large positive magnetoresistance and broadband photodetection owing to its astounding electron transport properties. Here, we report the role of morphology, texture, and composition in the transport properties of CVD-grown highly conducting PtTe x . Two different compositions of Te atoms, named tellurium stoichiometric (TS) and tellurium rich (TR), with different morphology have been obtained in the PtTe x films. The highest longitudinal conductivity was found to be ∼ 3.57 × 10 7 and 3.83 × 10 6 S m −1 at 200 K in the TR and TS-PtTe x samples, respectively. The maximum carrier density in TR and TS-PtTe x samples was found to be of the order of 10 22 and 10 21 cm −3 , respectively. Further, the negative magnetoresistance has also been found to be ∼ −2.2% at 300 K in the presence of an in-plane magnetic field of 9 T. Our results, reporting extremely high conductivity along with negative magnetoresistance, promise exciting applications of PtTe x for nanoelectronic devices.