蚀刻(微加工)
材料科学
氮化物
干法蚀刻
光电子学
图层(电子)
腐蚀坑密度
发光二极管
兴奋剂
光致发光
等离子体刻蚀
量子阱
二极管
分析化学(期刊)
反应离子刻蚀
纳米技术
化学
光学
激光器
物理
色谱法
作者
Wan Ying Ho,Yi Chao Chow,Zachary J. Biegler,Kai Shek Qwah,Tanay Tak,Ashley Wissel-Garcia,Inc Liu,Feng Wu,Shuji Nakamura,James S. Speck
摘要
Atomic layer etching (ALE) was performed on (Al, In, Ga)N thin films using a cyclic process of alternating Cl2 gas absorption and Ar+ ion bombardment in an inductively coupled plasma etcher system. The etch damage was characterized by comparing photoluminescence of blue single quantum well light-emitting diodes before and after the etch as well as bulk resistivities of etched p-doped layers. It was found that etched surfaces were smooth and highly conformal, retaining the step-terrace features of the as-grown surface, thus realizing ALE. Longer exposures to the dry etching increased the bulk resistivity of etched surfaces layers slightly, with a damaged depth of ∼55 nm. With further optimization and damage recovery, ALE is a promising candidate for controlled etching with atomic accuracy. It was found that Al0.1Ga0.9N acts as an etch barrier for the ALE etch, making it a suitable etch to reveal buried V-defects in III-nitride light emitting diodes.
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