量子隧道
数码产品
分子电子学
简单(哲学)
钥匙(锁)
透视图(图形)
纳米技术
计算机科学
材料科学
统计物理学
物理
分子
光电子学
工程类
电气工程
量子力学
人工智能
认识论
计算机安全
哲学
作者
Davood Taherinia,C. Daniel Frisbie
摘要
We share our perspective that a simple analytical model for electron tunneling in molecular junctions can greatly aid quantitative analysis of experimental data in molecular electronics. In particular, the single-level model (SLM), derived from first principles, provides a precise prediction for the current-voltage (I-V) characteristics in terms of key electronic structure parameters, which in turn depend on the molecular and contact architecture. SLM analysis thus facilitates understanding of structure-property relationships and provides metrics that can be compared across different types of tunnel junctions, as we illustrate with several examples.
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