Bandstructure of interdiffused InGaN/GaN quantum well

Quantum well composition intermixing is a thermal induced interdiffusion of the constituent atoms through the hetero-interface. The intermixed structures created by both impurity induced and impurity-free vacancy promoted processes have recently attracted high attention. In recent years, blue green LEDs and lasers of III-nitride semiconductors have attracted a large amount of interest. This is mainly due to its large bandgap range from 1.89 eV (wurtzite InN) to 3.44 eV (wurtzite GaN). InGaN/GaN single quantum well structures have been used to achieve high lumens blue and green light emitting diodes. In this paper, we present the band structure of a strained InGaN/GaN single quantum well under the influence of interdiffusion. Band structure is a fundamental aspect in determining the electronic and optical properties of the materials such as optical gain, refractive index, absorption, etc.