ZnO for homojunction light emitting diodes and transparent conductors
作者
Xiao Wei Sun
标识
DOI:10.1109/pho.2011.6110667
摘要
ZnO has a bandgap of 3.4 eV and exciton binding energy of about 60 meV, which makes it an interesting UV emitting material with great potential. It is also a very promising transparent conducting oxide to be used as the alternative of indium tin oxide (ITO). ITO may retreat from transparent conducting oxide in the long run due to the scarcity of In.