石墨烯
多金属氧酸盐
双极扩散
复合数
图层(电子)
光掩模
光电子学
化学
氧化物
纳米技术
硅
逐层
晶体管
材料科学
电子
复合材料
有机化学
催化作用
电压
物理
量子力学
抵抗
作者
Haolong Li,Shuping Pang,Si Wu,Xinliang Feng,Kläus Müllen,Christoph Bubeck
摘要
Graphene oxide (GO) nanosheets and polyoxometalate clusters, H(3)PW(12)O(40) (PW), were co-assembled into multilayer films via electrostatic layer-by-layer assembly. Under UV irradiation, a photoreduction reaction took place in the films which converted GO to reduced GO (rGO) due to the photocatalytic activity of PW clusters. By this means, uniform and large-area composite films based on rGO were fabricated with precisely controlled thickness on various substrates such as quartz, silicon, and plastic supports. We further fabricated field effect transistors based on the composite films, which exhibited typical ambipolar features and good transport properties for both holes and electrons. The on/off ratios and the charge carrier mobilities of the transistors depend on the number of deposited layers and can be controlled easily. Furthermore, we used photomasks to produce conductive patterns of rGO domains on the films, which served as efficient microelectrodes for photodetector devices.
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