Ga2O3 Vertical SBD With Suspended Field Plate-Assisted Shallow Mesa Termination for Multikilovolt and Ampere-Class Applications

In this work, a vertical gallium oxide (Ga2O3) Schottky barrier diode (SBD) with suspended field plate-assisted shallow mesa termination (SFPM-SBD) is proposed and fabricated. The suspended field plate is achieved by using Cl2 in the ICP etching process to facilitate isotropic etching of Ga2O3. Compared with shallow mesa SBD, the introduction of SFPM can further optimize the electric field (E_Field) distribution. Consequently, a high breakdown voltage (BV) of over 3.5 kV and a low specificon-resistance of 5.77 m$\Omega \cdot $cm2 are achieved, resulting in a power figure of merit (PFOM) >2.12 GW/cm2. Furthermore, the large-area device with$3\times 3$mm2 is fabricated, achieving a BV exceeding 1.5 kV and a high forward current of 12 A at 2 V. The simplified fabrication process of the SFPM-SBD, combined with its outstanding performance, makes it a promising candidate for multikilovolt and ampere-class applications.