Effect Ni doping on nanostructured SnS thin films prepared by CSP method

Thin films of Undoped SnS and SnS: 1% and 3% Ni were fabricated via chemical spray pyrolysis CSP on glass substrates. The as-deposited films were examined by X-ray diffraction, AFM and UV-visible Spectrophotometer. The structural parameters; crystallite size (D), strain and dislocation density were calculated from x-ray diffraction pattern. The prepared films revealed only the SnS phase with a predominant (111) preferred direction. Studies showed that the (D) increased from 11. 23 nm to 12. 41 nm with increase of Ni content, while the strain decreases from 30. 85 to 27. 92. AFM images show that the particle size of the prepared films was in the domain of 74. 79 to 53. 36 nm with increase doping from 1% and 3% Ni, the average surface roughness values were decreases from 7. 70 to 2. 53 nm. and RMS values show decreases from 6. 82 to 3. 26 nm with Ni doping, the transmittance of all films increased as the wavelength increase, and a general decrease in the transmittance is observed as the doping from 0%. 1% and 3% Ni increase. The energy gap Eg was decreased from 1. 38 to 1. 24 eV when Ni doping increase. The effects of Ni doping on absorption coefficient, refractive index and extinction coefficient. It was found that all these parameters increase as the Ni doping increased to 3%.