Comparison of random upright pyramids and inverted pyramid photonic crystals in thin crystalline silicon solar cells: An optical and morphological study

The potential of enabling a wide range of applications with lightweight, flexible, thin silicon photovoltaic (PV) devices has led to research interest in various light-trapping technologies for thin silicon absorbers. Herein, using both experiments and photonic modelling, we present a detailed comparison between random pyramid texturing and inverted pyramid photonic crystal patterning in thin silicon vis-à-vis light trapping. In particular, we investigate the potential of uniform single-dimension periodic structures in contrast to conventional multi-dimensional random structures for high broadband absorption efficiency in ultra-thin silicon. We find that inverted pyramid photonic crystals cause a large increase in optical path length especially for long wavelength photons due to strong wave interference producing exceptionally high absorption and so does random pyramids though with slightly lower absorption than that of photonic crystals. On the other hand, the random pyramids, fabricated via a one-step etching process with feature sizes ranging from sub-micron to 4 µm, have higher absorption at short wavelengths due to their multi-dimensional size distribution. Overall, we find that random textured pyramids appropriately fabricated can yield a comparable ideal photocurrent density to that by photonic crystals for 10 µm thick silicon.