双层
材料科学
X射线光电子能谱
异质结
光电子学
电阻随机存取存储器
制作
氧气
电阻式触摸屏
图层(电子)
薄膜
电压
纳米技术
电气工程
化学
化学工程
膜
生物化学
工程类
医学
替代医学
有机化学
病理
作者
Neeraj Jain,Shashi Sharma,Renu Kumawat,Prerna Jain,Dayanand Kumar,Rishi Vyas
出处
期刊:Micro and nanostructures
日期:2022-09-01
卷期号:169: 207366-207366
被引量:5
标识
DOI:10.1016/j.micrna.2022.207366
摘要
This work reports the fabrication of resistive memory device with a bilayer ZnO/HfO2 structure. Highly stable and uniform bipolar resistance switching (RS) characteristics were attained when HfO2 interfacial layer is introduced in ZnO device. The bilayer device attains good resistive switching with increased resistance ON-OFF ratio of the order of ∼102, better dc endurance of > 102 cycles and retention of >104 s at room temperature. X-ray Photoelectron Spectroscopy (XPS) investigation is also done and it is confirmed that oxygen vacancies in ZnO thin film are responsible for improved resistance switching. The current-voltage (I–V) relationship reveals that switching behavior of these devices is mainly dominated by Space-Charge-Limited-Current mechanism (SCLC) regulated due to localized oxygen vacancies. Effect of temperature on the electrical conductivity has also been investigated to analyze the behavior of Low Resistance States (LRS) and High Resistance States (HRS). The findings imply that the bilayer ZnO/HfO2 device structure is a promising one for upcoming non-volatile memory applications.
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