Preparation of extraordinary high-density indium-tin oxide target on the basis of pressure-less sintering method

Density is the most important parameter determining the performance of indium-tin oxide (ITO) targets. However, the full densification of ITO ceramics is extremely difficult. Previously reported strategies are based on the addition of components such as sintering aids or significant process adjustments. In this study, we aimed to realise the full densification of an ITO target by the fine regulation of parameters involved in the conventional pressure-less sintering process. The phase transitions, BET surface area, and particle size changes of indium-tin co-precipitated nanoprecursors sintered at different temperatures were studied. Moreover, the effects of the ITO powder state and sintering temperature on the density, resistivity, and microstructural uniformity of the ITO target were investigated. The results showed that the existence of rhombohedral In2O3 in the ITO powder and ceramic sintering temperature are vital to the full densification of the ITO target. Density was found to dominate ITO-target resistivity when the sintering temperature was <1585 °C. In this study, an extraordinary high-density (99.81 %), low-resistivity (1.707 × 10−4 Ω cm), and uniform-microstructured ITO target is prepared under optimised operation conditions.