应变计
材料科学
硅
偏移量(计算机科学)
制作
惠斯通大桥
压力传感器
结构工程
复合材料
电气工程
光电子学
机械工程
工程类
计算机科学
电阻器
电压
医学
病理
程序设计语言
替代医学
作者
Ji-Hoon Han,Sung Joon Min,Eun-Sang Lee,Joon Hyub Kim,Nam Ki Min
出处
期刊:Sensors
[Multidisciplinary Digital Publishing Institute]
日期:2023-10-11
卷期号:23 (20): 8390-8390
被引量:1
摘要
Half-bridge silicon strain gauges are widely used in the fabrication of diaphragm-type high-pressure sensors, but in some applications, they suffer from low output sensitivity because of mounting position constraints. Through a special design and fabrication approach, a new half-bridge silicon strain gauge comprising one arc gauge responding to tangential strain and another linear gauge measuring radial strain was developed using Silicon-on-Glass (SiOG) substrate technology. The tangential gauge consists of grid patterns, such as the reciprocating arc of silicon piezoresistors on a thin glass substrate. When two half-bridges are connected to form a full bridge with arc-shaped gauges that respond to tangential strain, they have the advantage of providing much higher output sensitivity than a conventional half-bridge. Pressure sensors tested under pressure ranging from 0 to 50 bar at five different temperatures indicate a linear output with a typical sensitivity of approximately 16 mV/V/bar, a maximum zero shift of 0.05% FS, and a span shift of 0.03% FS. The higher output level of pressure sensing gauges will provide greater signal strength, thus maintaining a better signal-to-noise ratio than conventional pressure sensors. The offset and span shift curves are quite linear across the operating temperature range, giving the end user the advantage of using very simple algorithms for temperature compensation of offset and span shift.
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