Analysis of Traps Behavior Related to Body-Biased Hot Carrier Degradation in 14 nm nFinFETs

In this study, interface and oxide traps in relation to body-biased hot carrier degradation (HCD) in 14 nm nFinFETs are investigated. An accelerated degradation of device performance is observed as a function of body bias voltage. In particular, the interface traps show a rapid response even at low body bias levels, while the oxide traps show an increase only above a certain body bias threshold. The location of the newly generated traps is meticulously analyzed and the quantized oxide traps are characterized using pulsed I–V measurements. In addition, a comprehensive analysis of the corresponding carrier transportation mechanism is built based on the trap location.