Geomorphometry and microelectronic metrology: Converged realms

Abstract This article discusses the application of geomorphometric methods in microelectronic metrology. Six typical microelectronic items were geomorphometrically analyzed using their digital elevation models with nano‐ and micrometer‐range resolution and elevation difference: (1) a silicon–quartz structure; (2) a mechanically polished silicon wafer; (3) a photovoltaic blend sample; (4) an X‐ray optical element (a fused quartz spherical concave substrate); (5) a Bosch process‐formed, 20 aluminum layered membrane; and (6) a silicon–glass assembly with a volumetric defect. Geomorphometric modeling increases significantly the visibility and informativeness of data presentation, allowing to identify effectively the spatial distribution of nano‐ and microforms of the surface of microelectronic items. Geomorphometric methods provide an opportunity to study the size, location, and characteristic features of nano‐ and microtopographic inhomogeneities of microelectronic items using maps of minimum, maximum, mean, and unsphericity curvatures as well as other morphometric variables.