The impact of semiconductor surface states on vacuum field emission

This work presents a theoretical analysis of the impact of surface states on vacuum field emission currents in semiconductors. In wide and ultra-wide bandgap semiconductors such as GaN and AlGaN, low electron affinity has been proposed as a benefit for field emission into vacuum. However, in these materials, the surface Fermi level at the surface is pinned well below the conduction band, and the surface depletion barriers due to the surface Fermi level pinning can be comparable to or higher than the electron affinity. Therefore, analysis of field emission requires consideration of not only the vacuum potential barrier set by electron affinity, but also the depletion region near the semiconductor surface. In this paper, we develop analytical models to predict field emission currents with careful consideration of the impact of surface states on the energy band alignment. The results are used to provide guidelines for design of field emitters that could benefit from the low electron affinity of semiconductors such as Al(Ga)N.