光电探测器
材料科学
响应度
光电子学
钙钛矿(结构)
光致发光
钝化
比探测率
量子产额
量子效率
飞秒
光子学
激光器
纳米技术
光学
化学工程
图层(电子)
荧光
工程类
物理
作者
Bowon Moon,Jae‐Hyeon Ahn,Min‐Hye Jeong,Sang‐Hyeon Lee,Jong‐Soo Lee
标识
DOI:10.1002/adom.202300414
摘要
Abstract The 2D–0D hybrid photodetector, with its special structure, high sensitivity, and wavelength tunability, is reported as a promising candidate system for optoelectronic devices. As research on hybrid lead halide perovskite quantum dots (PQDs) has progressed, PQDs with high photoluminescence (PL) quantum yield and excellent absorption properties are increasingly applied in optoelectronic devices; however, PQD stability remains one of the biggest limitations on device performance. Here, it is reported that the properties and stability of the hybrid photodetectors are improved by surface passivation using the quaternary ammonium ligand (didodecyldimethylammonium bromide, DDAB). The average carrier lifetime of DDAB treated CsPbBr 3 PQDs (DDAB‐capped PQDs) is longer than that of pristine CsPbBr 3 PQDs by 6.68–14.88 ns. It is confirmed that the durability against water is reduced by only 25.8% at PL intensity and is preserved for more than 16 h. A 2D–0D hybrid photodetector is then fabricated by deposition of DDAB‐capped PQDs on the WSe 2 field‐effect transistor device for a high‐performance photodetector. The WSe 2 /DDAB‐capped PQD hybrid photodetector exhibits an enhanced responsivity of 1.4 × 10 3 A W −1 and an improved detectivity of 3.1 × 10 13 Jones under 40.0 µW cm −2 of a 405 nm laser.
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