光电探测器
材料科学
横杆开关
光电子学
沉积(地质)
化学气相沉积
钙钛矿(结构)
薄膜
纳米技术
电子工程
沉积物
化学工程
生物
工程类
古生物学
作者
Zhenye Zhan,Dongxu Lin,Juntao Cai,Yueheng Lu,Aidi Chen,Tiankai Zhang,Ke Chen,Pengyi Liu,Xiaomu Wang,Weiguang Xie
标识
DOI:10.1002/adma.202207106
摘要
Abstract With the development of perovskite photodetectors, integrating photodetectors into array image sensors is the next target to pursue. The major obstacle to integrating perovskite photodiodes for dynamic imaging is the optoelectrical crosstalk among the pixels. Herein, a perovskite photodiode–blocking diode (PIN‐BD) crossbar array with pixel‐wise rectifying property by the vapor deposition method is presented. The PIN‐BD shows a large rectification ratio of 3.3 × 10 2 under illumination, suppressing electrical crosstalk to as small as 8.0% in the imaging array. The fast response time of 72.8 ns allows real‐time image acquisition by over 25 frames per second. The imaging sensor exhibits excellent imaging capability with a large linear dynamic range of 112 dB with 4096 gray levels and weak light sensitivity under 1.2 lux.
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