量子反常霍尔效应
凝聚态物理
拓扑绝缘体
自旋电子学
量子霍尔效应
量子自旋霍尔效应
量子相变
铁磁性
无缝回放
拓扑序
量子相
量子
物理
拓扑(电路)
相变
量子力学
磁场
数学
组合数学
标识
DOI:10.48550/arxiv.1909.07019
摘要
The quantum anomalous Hall effect is a intriguing topological nontrivial phase arising from spontaneous magnetization and spin-orbit coupling. However, the tremendously harsh realizing requirements of the quantum anomalous Hall effects in magnetic topological insulators of Cr or V-doped (Bi,Sb)2Te3 film, hinder its practical applications. Here, we use first principles calculations to predict that the three Mn2O3 structure is an intrinsic ferromagnetic Chern insulator. Remarkably, a quantum anomalous Hall phase of Chern number C = -2 is found, and there are two corresponding gapless chiral edge states appearing inside the bulk gap. More interestingly, only a small tensile strain is needed to induce the phase transition from Cmm2 and C222 phase to P6/mmm phase. Meanwhile, a topological quantum phase transition between a quantum anomalous Hall phase and a trivial insulating phase can be realize. The combination of these novel properties renders the two-dimensional ferromagnet a promising platform for high effciency electronic and spintronic applications.
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