Operation Principle of AlGaN/GaN HEMT

Nowadays, the development of wide bandgap-based devices in power electronics has become more prominent to ameliorate the energy capability of devices. Furthermore, it can help reduce the total energy wastage in the world. Presently, AlGaN/GaN high-electron-mobility transistors (HEMTs) have shown excellent performance on the back of their extraordinary attributes like higher carrier density, and higher channel mobility over traditional wide bandgap devices like AlGaAs/GaAs. Because of the outstanding characteristics of the GaN HEMTs and their composited materials, they are becoming promising devices for the upcoming generation of more power and highest frequency-based implements. This chapter will provide a complete overview of the “Operation Principle of AlGaN/GaN HEMT.”