Vertical Tunneling Field-Effect Transistor With Germanium Source and T-Shaped Silicon Channel for Switching and Biosensing Applications: A Simulation Study

In this article, we introduce a novel vertical tunneling transistor that uses two germanium source regions and a T-shaped silicon channel and investigate its performance for low-voltage digital/analog and biosensing applications, by using numerical simulations. The switching performance of the device is improved by employing two highly doped N ⁺ pocket regions next to the germanium source regions. To increase the validity and accuracy of the obtained results, calibration with the results of an experimental report is carried out. As a biosensor, the performance of the device in detection and separation of different biomolecules is studied, too. Some of the main achievements among the various digital/analog and biosensing performance metrics are $I_{on} = 88.9 ~\mu \text{A}/\mu \text{m}$ , SS $_{\mathrm{avg}} =25.28$ mV/dec, ${f}_{T} =192.64$ GHz, and ${S}_{I_{D}}= 6.95\times10$ ⁵ .