电负性
材料科学
兴奋剂
X射线光电子能谱
掺杂剂
单独一对
空位缺陷
结合能
硫醇
化学物理
分子
化学吸附
纳米技术
物理化学
化学工程
光电子学
化学
结晶学
有机化学
原子物理学
吸附
工程类
物理
作者
Dong Min Sim,Min‐Cheol Kim,Soonmin Yim,Min‐Jae Choi,Jee‐Hye Choi,Seunghyup Yoo,Yeon Sik Jung
出处
期刊:ACS Nano
[American Chemical Society]
日期:2015-11-04
卷期号:9 (12): 12115-12123
被引量:322
标识
DOI:10.1021/acsnano.5b05173
摘要
MoS2 is considered a promising two-dimensional active channel material for future nanoelectronics. However, the development of a facile, reliable, and controllable doping methodology is still critical for extending the applicability of MoS2. Here, we report surface charge transfer doping via thiol-based binding chemistry for modulating the electrical properties of vacancy-containing MoS2 (v-MoS2). Although vacancies present in 2D materials are generally regarded as undesirable components, we show that the electrical properties of MoS2 can be systematically engineered by exploiting the tight binding between the thiol group and sulfur vacancies and by choosing different functional groups. For example, we demonstrate that NH2-containing thiol molecules with lone electron pairs can serve as an n-dopant and achieve a substantial increase of electron density (Δn = 3.7 × 1012 cm–2). On the other hand, fluorine-rich molecules can provide a p-doping effect (Δn = −7.0 × 1011 cm–2) due to its high electronegativity. Moreover, the n- and p-doping effects were systematically evaluated by photoluminescence (PL), X-ray photoelectron spectroscopy (XPS), and electrical measurement results. The excellent binding stability of thiol molecules and recovery properties by thermal annealing will enable broader applicability of ultrathin MoS2 to various devices.
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