低噪声放大器
噪声系数
宽带
电子工程
放大器
电气工程
高电子迁移率晶体管
工程类
计算机科学
噪音(视频)
晶体管
电压
CMOS芯片
图像(数学)
人工智能
作者
Sharad B. Gholap,Sushant S. Patil
摘要
This paper presents a wideband low noise amplifier with low noise enhancement mode Pseudomorphic HEMT ATF- 54143 transistor. The software Agilent Advanced Design System (ADS) was used for simulation of the operation of the amplifier. The performance of the amplifier were recorded and analyzed. The aim of the paper is to give low noise figure, high gain and unconditional stability. The simulation results show that the LNA using pHEMT is absolutely stable with in the band range of 1.1-1.7 GHz, which includes the band of GPS, satellite, navigation systems and cognitive radio.
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