CMOS芯片
晶体管
电气工程
功率(物理)
电子工程
工程类
材料科学
功率半导体器件
纳米片
计算机科学
备用电源
场效应晶体管
转换器
光电子学
电力电子
逻辑门
作者
Geoffrey C-F Yeap,M. Wang,S.S. Lin,C. M. Lee,D. Hsu,I.W. Wu,Y.R. Cheng,Y.C. Tseng,P-H Huang,H.Y. Chen,P.H. Huang,P.W. Wang,P. Hung,Yi‐Cheng Lin,C.F. Chang,C.Y. Kao,L. G. Chen,C.P. Tsai,K.F. Liao,P.C. JangJian
出处
期刊:
日期:2026-06-14
卷期号:: 1-3
标识
DOI:10.1109/vlsitechnologyandcir65830.2026.11577475
摘要
We successfully developed and qualified A16 platform technology, industry-first angstrom-class CMOS technology platform featuring Super Power Rail (SPR). TSMC's SPR is an innovative backside power delivery solution incorporating a novel backside direct contact scheme that preserves N2P gate density and NanoFlex design-technology co-optimization for maximum product design benefits (Fig.1). Compared with N2P (performance-enhanced N 2), A16 provides a further$8 \% \sim 10 \%$faster speed at power, or$15 \% \sim 20 \%$power improvement and additional$8 \% \sim 10 \%$chip density gain. A16 is most suitable for AI/HPC products with complex signal routes and dense power delivery network. Mass production is slated for Q4'26.
科研通智能强力驱动
Strongly Powered by AbleSci AI