Development of Improved n-μc-SiO$_x$ :H Films and Its Innovative Application in Silicon-Based Single Junction Thin Film Solar Cells

In this paper, we have discussed about the development of high-quality n-μc-SiO:H films by a seeding technique working as a potential back reflector layer (BRL). Highly crystalline and conducting n-μc-Si:H films are used as a seed layer. Phosphorous-doped SiO _x :H film with suitable optoelectronics properties has been deposited by a radio frequency plasma enhanced chemical vapor deposition technique using parallel plate reactors (capacititively coupled). Optoelectronics properties have been controlled and optimized varying the deposition parameters such as process pressure, power density, partial pressure of CO ₂ , etc. We have also innovatively replaced the n-layer, i.e., n-a-Si:H in case of the a-Si:H cell and n-μc-Si:H for μc-Si:H cells by this optimized seed + n-μc-SiO:H films. The performance of this n-μcSiO:H film grown on the n-μc-Si:H seed layer as n-layer as well as BRL of single junction a-Si:H and μc-Si:H solar cells has been evaluated and better Photovoltaic (PV) characteristics of the solar cell are realized as compared to those of the films developed without any seed layer. a-Si:H solar cells with initial efficiency of 9.38% and μc-Si:H solar cell of 8.50% have been successfully fabricated by using improved doped SiO _x :H based BRL replacing conventional n-layer of the single junction cells.