退火(玻璃)
材料科学
降噪
磁通门罗盘
电磁屏蔽
无定形固体
偏移量(计算机科学)
噪声地板
光电子学
磁场
声学
复合材料
核磁共振
电气工程
噪声测量
磁强计
物理
计算机科学
化学
工程类
量子力学
有机化学
程序设计语言
作者
Mattia Butta,Byron P. Schutte
标识
DOI:10.1109/tmag.2019.2894302
摘要
It has been shown that annealing of amorphous magnetic wire used as a core for orthogonal fluxgates in the fundamental mode can significantly decrease the noise of the sensors in the 1/f region. This is due to an increase in the circumferential anisotropy due to the dc current flowing through the wire during annealing. This method, however, presents some drawbacks: first, it requires an infrared furnace and precise compensation of the magnetic field inside it. Second, it is very slow, because it requires the cooling of the whole furnace before removing the wire. Most importantly, while the 1/f noise decreases, the noise floor increases. In this paper, we present a method that allows the simultaneous reduction of 1/f noise and noise floor. This method is based on Joule annealing by means of a very large current in the wire. The current is periodically flipped with 0.25 Hz frequency in order to avoid an excessive increase in the offset. The annealing is performed in a four-layer shielding to avoid the presence of an external dc field. Annealing for 1 min, 1 wire-based sensor returned a considerable noise reduction both in the 1/f regions from 2.5 to 1.5 pT/VHz) V while the noise floor was unchanged at 650 fT/ Hz. For larger annealing time, however, the noise floor rose. We tried to compensate this problem by increasing the number of wires to four, but also in this case, we achieved the best noise reduction (from 1.7 to V V 0.75 pT/ Hz at 1 Hz and from 470 to 350 fT/ Hz noise floor) with 1 min annealing. By the use of thermocamera, we discovered that the problem of long-time annealing was that the sensor head support was warming up too much. Therefore, we repeated the experiment by annealing 21 min as a series of 1 min annealing followed by 3 min of no current for 21 times to let the sensor head totally cool to room temperature after every annealing period. In this way, we achieved the lowest noise of 630 fT/VHz at 1 Hz V and 400 fT/ Hz noise floor.
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