Nanometer scale mixed patterns formed by self-aligned spacer image transfer and optical lithography technology

A mixed lithography with self-aligned spacer image transfer (SIT) technology and I-Line lithography is successfully demonstrated in this paper. The large patterns are defined in the resist film through photolithography whereas the smaller patterns are defined through self-aligned SIT. The formed nanometer hard mask (HM) patterns have a good compatibility with I-Line lithography. The image transfer process by etching Si is further verified in our experiment. The mixed patterns with well uniformity after Si etching illustrate the feasibility and provide a useful candidate for the real needs in the future.