光探测
光电流
材料科学
线性二色性
极化(电化学)
光电探测器
光电子学
各向异性
线极化
光学
化学
物理
结晶学
圆二色性
物理化学
激光器
作者
Ziqi Zhou,Mingsheng Long,Longfei Pan,Xiaoting Wang,Mianzeng Zhong,Mark Blei,Jianlu Wang,Jingzhi Fang,Sefaattin Tongay,Weida Hu,Jingbo Li,Zhongming Wei
出处
期刊:ACS Nano
[American Chemical Society]
日期:2018-11-08
卷期号:12 (12): 12416-12423
被引量:210
标识
DOI:10.1021/acsnano.8b06629
摘要
The ability to detect linearly polarized light is central to practical applications in polarized optical and optoelectronic fields and has been successfully demonstrated with polarized photodetection of in-plane anisotropic two-dimensional (2D) materials. Here, we report the anisotropic optical characterization of a group IV-V compound-2D germanium arsenic (GeAs) with anisotropic monoclinic structures. High-quality 2D GeAs crystals show the representative angle-resolved Raman property. The in-plane anisotropic optical nature of the GeAs crystal is further investigated by polarization-resolved absorption spectra (400-2000 nm) and polarization-sensitive photodetectors. From the visible to the near-infrared range, 2D GeAs nanoflakes demonstrate the distinct perpendicular optical reversal with a 75-80° angle on both the linear dichroism and polarization-sensitive photodetection. Obvious anisotropic features and the high dichroic ratio of Ipmax /Ipmin ∼ 1.49 at 520 nm and Ipmax /Ipmin ∼ 4.4 at 830 nm are achieved by the polarization-sensitive photodetection. The polarization-dependent photocurrent mapping implied that the polarized photocurrent mainly occurred at the Schottky photodiodes between electrode/GeAs interface. These experimental results are consistent with the theoretical calculation of band structure and band realignment. Besides the excellent polarization-sensitive photoresponse properties, GeAs-based photodetectors also exhibit rapid on/off response. These results demonstrate that the 2D GeAs crystals have promising potential for polarization optical applications.
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