Coupling effect on the removal mechanism and surface/subsurface characteristics of SiC during grinding process at the nanoscale

In this study, the influence mechanism of the coupling effect on the material removal process of SiC in nanoscale condition is investigated using the molecular dynamics method. The geometrical characteristics of a machined surface and the damage distribution under a coupling effect are analyzed. The influence law of the coupling effect on surface/subsurface features is also presented. According to the analysis results, the repeated and interference scratches with multi-abrasives, large-area machined surface morphology, and damage distribution are analyzed. This study is significant in understanding the removal mechanism of SiC during the grinding process at the nanoscale.