Numerical simulation of novel designed perovskite/silicon heterojunction solar cell

In this work, novel designed solar cell is proposed for first time for doped perovskite based silicon heterojunction solar cells where (n/p)-type doped perovskite used as ultra-thin emitter layer and (p/n)-type silicon as absorber layer. Performance of two different types of solar cells, n-type doped perovskite with p-type based crystalline silicon (p-cSi) solar cells and p-type doped perovskite with n-type based crystalline silicon (n-cSi) solar cells are studied and highest efficiency of 28.82% and 29.48% respectively are achieved by optimizing their properties. Thicknesses of silicon wafer and perovskite layer, band gap of MAPbI3 layer, doping density of ultra-thin perovskite (emitter) layer, doping density of c-Si layer, texturing of silicon wafer, metal work function of different materials at front contact and back contact & its band bending on using different metals, and role of ZnO and ITO as conducting surface layer has been studied and optimized in the present work. AFORS-HET automat simulation software is used to study the performance of these simulated solar cells.