材料科学
开路电压
光电子学
异质结
锑
钝化
能量转换效率
薄膜
退火(玻璃)
电压
太阳能电池
纳米技术
复合材料
电气工程
冶金
工程类
图层(电子)
作者
Rong Tang,Shuo Chen,Zhaoke Zheng,Zhenghua Su,Jingting Luo,Ping Fan,Xianghua Zhang,Jiang Tang,Guangxing Liang
标识
DOI:10.1002/adma.202109078
摘要
Despite the fact that antimony triselenide (Sb2 Se3 ) thin-film solar cells have undergone rapid development in recent years, the large open-circuit voltage (VOC ) deficit still remains as the biggest bottleneck, as even the world-record device suffers from a large VOC deficit of 0.59 V. Here, an effective interface engineering approach is reported where the Sb2 Se3 /CdS heterojunction (HTJ) is subjected to a post-annealing treatment using a rapid thermal process. It is found that nonradiative recombination near the Sb2 Se3 /CdS HTJ, including interface recombination and space charge region recombination, is greatly suppressed after the HTJ annealing treatment. Ultimately, a substrate Sb2 Se3 /CdS thin-film solar cell with a competitive power conversion efficiency of 8.64% and a record VOC of 0.52 V is successfully fabricated. The device exhibits a much mitigated VOC deficit of 0.49 V, which is lower than that of any other reported efficient antimony chalcogenide solar cell.
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